IGC18T120T6L Datasheet | Infineon

FEATURES : - 1200V Trench + Field Stop technology - low switching losses - positive temperature coefficient - easy paralleling This chip is used for: - low / medium power modules Applications: - low / medium power drives Chip Type IGC18T120T6L VCE ICn 1200V 15A Die Size 4.16 x 4.34 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Remended storage environment 4.16 x 4.34 2.652 x 2.246 1.185 x 0.702 mm 2 18.1 / 10.3 115 µm 150 mm 0 grd Photoimide 3200 nm Al Si Cu Ni Ag - system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7633C, Edition 1, 31.10.2007 MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter voltage , Tj=25 °C DC collector current, limited by...