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IGC28T65T8M
IGBT3 Chip Medium Power
Features: 650V Trench & Field Stop technology high short circuit capability, self limiting
short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target
applications
Recommended for: power modules
Applications: drives
Chip Type IGC28T65T8M
VCE 650V
ICn 50A
Die Size 6.57 x 4.2 mm2
C
G E
Package sawn on foil
Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal
6.57 x 4.2 See chip drawing
0.817 x 1.52 27.
IGC28T65T8M Datasheet
