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IGC28T65T8M - IGBT

IGC28T65T8M Description

IGC28T65T8M IGBT3 Chip Medium Power .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

IGC28T65T8M Features

* 650V Trench & Field Stop technology
* high short circuit capability, self limiting short circuit current
* positive temperature coefficient
* easy paralleling

IGC28T65T8M Applications

* Recommended for:
* power modules Applications:
* drives Chip Type IGC28T65T8M VCE 650V ICn 50A Die Size 6.57 x 4.2 mm2 C G E Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer

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