IGC28T65T8M Datasheet - Infineon

IGBT

IGC28T65T8M Features

* 650V Trench & Field Stop technology

* high short circuit capability, self limiting short circuit current

* positive temperature coefficient

* easy paralleling

* Qualified according to JEDEC for target applications Recommended for:

* power modules Applications:

* drive

IGC28T65T8M General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG A.

IGC28T65T8M Datasheet (72.50 KB)