IGC39T65QE Datasheet - Infineon

High Speed IGBT3

IGC39T65QE Features

* VCES = 650 V

* ICn = 75 A

* 650 V trench & field stop technology

* High switching speed

* Low VCEsat

* Low EMI

* Low turn-off losses

* Positive temperature coefficient Potential applications

* Uninterruptible power supplies

IGC39T65QE General Description

* Recommended for discrete components and modules Type IGC39T65QE Die size 6.59 mm x 5.91 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC39T65QE High Speed IGBT.

IGC39T65QE Datasheet (94.92 KB)