Datasheet4U Logo Datasheet4U.com

IGC39T65QE - High Speed IGBT3

General Description

Recommended for discrete components and modules Type IGC39T65QE Die size 6.59 mm x 5.91 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC39T65QE High Speed IGBT

Key Features

  • VCES = 650 V.
  • ICn = 75 A.
  • 650 V trench & field stop technology.
  • High switching speed.
  • Low VCEsat.
  • Low EMI.
  • Low turn-off losses.
  • Positive temperature coefficient Potential.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description
IGC39T65T8M IGBT
IGC31T65QE IGBT
IGC36T120T6L IGBT
IGC36T120T8L IGBT
IGC019S06S1 60V Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IGC39T65QE High Speed IGBT3 Chip Features • VCES = 650 V • ICn = 75 A • 650 V trench & field stop technology • High switching speed • Low VCEsat • Low EMI • Low turn-off losses • Positive temperature coefficient Potential applications • Uninterruptible power supplies • Welding converters • Converters with high switching frequency Product validation • Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22 Description • Recommended for discrete components and modules Type IGC39T65QE Die size 6.59 mm x 5.91 mm Delivery form Sawn on foil Datasheet www.infineon.