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IGC50T120T6RL - IGBT

IGC50T120T6RL Description

IGC50T120T6RL IGBT4 Low Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pr.

IGC50T120T6RL Features

* 1200V Trench + Field Stop technology
* low switching losses
* positive temperature coefficient
* easy paralleling This chip is used for:

IGC50T120T6RL Applications

* low / medium power drives C G E Chip Type VCE ICn IGC50T120T6RL 1200V 50A Die Size 7.25 x 6.84 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per waf

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