IGC54T65T8RM Datasheet Text
IGC54T65T8RM
IGBT3 Chip Medium Power
Features
- VCES = 650 V
- ICn = 100 A
- 650 V trench & field stop technology
- High short circuit capability, self limiting short circuit current
- Positive temperature coefficient
- Easy paralleling Potential applications
- Drives Product validation
- Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22 Description
- Remended for power modules
Type IGC54T65T8RM
Die size 5.97 mm x 8.97 mm
Delivery form Sawn on foil
Datasheet .infineon.
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00 2023-04-28
IGC54T65T8RM
IGBT3 Chip Medium Power
Table of contents
Table of contents
Description
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