IGC54T65T8RM Datasheet - Infineon

IGBT

IGC54T65T8RM Features

* VCES = 650 V

* ICn = 100 A

* 650 V trench & field stop technology

* High short circuit capability, self limiting short circuit current

* Positive temperature coefficient

* Easy paralleling Potential applications

* Drives Product validation

IGC54T65T8RM General Description

* Recommended for power modules Type IGC54T65T8RM Die size 5.97 mm x 8.97 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC54T65T8RM IGBT3 Chip Medium Power Table.

IGC54T65T8RM Datasheet (103.32 KB)