IGC99T120T6RL
FEATURES
:
- 1200V Trench + Field Stop technology
- low switching losses
- positive temperature coefficient
- easy paralleling
This chip is used for:
- low / medium power modules
Applications:
- low / medium power drives
Chip Type
VCE ICn
Die Size
IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
10.39 x 9.5
7.987 x 8.923 1.31 x 0.811 mm 2
98.7 / 76.1
115 µm
150 mm
90 grd
Photoimide
3200 nm Al Si Cu
Ni Ag
- system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS...
