Full PDF Text Transcription for IGC99T120T6RL (Reference)
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IGC99T120T6RL. For precise diagrams, and layout, please refer to the original PDF.
IGC99T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip...
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losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type VCE ICn Die Size IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 10.39 x 9.5 7.987 x 8.923 1.31 x 0.811 mm 2 98.7 / 76.
IGC99T120T6RL Datasheet
