IGLD60R070D1 - Power Transistor

Features

Enhancement mode transistor.
Normally OFF switch.
Ultra fast switching.
No reverse-recovery charge.
Capable of reverse conduction.
Low gate charge, low output charge.
Superior commutation ruggedness.
Qualified for industrial.

Infineon

Datasheet Details

Part number	IGLD60R070D1
Manufacturer	Infineon
File Size	662.74 KB
Description	Power Transistor
Datasheet	IGLD60R070D1 Datasheet
Additional preview pages of the IGLD60R070D1 datasheet.

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Full PDF Text Transcription

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IGLD60R070D1 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI D D D D 1 G SK S S S S SK G 8 Gate Drain Kelvin Source Source 8 1,2,3,4 7 5,6 Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).

Published: Aug 14, 2021 |