Datasheet Details
| Part number | IGOT65R025D2 |
|---|---|
| Manufacturer | Infineon |
| File Size | 852.48 KB |
| Description | Power Transistor |
| Download | IGOT65R025D2 Download (PDF) |
|
|
| Part number | IGOT65R025D2 |
|---|---|
| Manufacturer | Infineon |
| File Size | 852.48 KB |
| Description | Power Transistor |
| Download | IGOT65R025D2 Download (PDF) |
|
|
|
.
.
.
Public IGOT65R025D2 Target datasheet CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 650 V.
With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e‑mode concept to maturity with end‑to‑end production in high volumes.
The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market.
| Part Number | Description |
|---|---|
| IGOT65R035D2 | 650V Transistor |
| IGOT65R045D2 | Power Transistor |
| IGOT65R055D2 | Power Transistor |
| IGOT60R042D1 | Power Transistor |
| IGOT60R070D1 | 600V enhancement-mode Power Transistor |
| IGO60R042D1 | Power Transistor |
| IGO60R070D1 | 600V enhancement-mode Power Transistor |