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IGP30N65F5 - IGBT

Datasheet Summary

Description

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Features

  • High speed F5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • Ideal fit with SIC Schottky Diode in boost converters.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Datasheet Details

Part number IGP30N65F5
Manufacturer Infineon
File Size 1.99 MB
Description IGBT
Datasheet download datasheet IGP30N65F5 Datasheet
Additional preview pages of the IGP30N65F5 datasheet.

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGP30N65F5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGP30N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology  FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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