IGP30N65F5 Datasheet - Infineon

IGP30N65F5 IGBT

IGP30N65F5 Features

* High speed F5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* 650V breakdown voltage

* Low gate charge QG

* Ideal fit with SIC Schottky Diode in boost converters

* Maximum junction temperature 175°C

* Qualif

Datasheet Details

IGP30N65F5

1.99 MB

Igbt.

IGP30N65F5 Distributor

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IGP30N65F5 IGP30N65F5 IGBT Infineon