• Part: IGT40R070D1E8220
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 524.14 KB
Download IGT40R070D1E8220 Datasheet PDF
Infineon
IGT40R070D1E8220
IGT40R070D1E8220 is Power Transistor manufactured by Infineon.
Features - Enhancement mode transistor - Normally OFF switch - Ultra fast switching - No reverse-recovery charge - Capable of reverse conduction - Low gate charge, low output charge - Superior mutation ruggedness - Qualified according to JEDEC Standards (JESD47 and JESD22) Benefits - Improves efficiency due to best Figure Of Merit (FOM) in 400V class - Exhibits very low noise level - Lower THD pared to best-in-class Silicon switch - patible with existing control ICs G SK DRAIN 1 1 SK G Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications - Class-D Audio Amplifier Table 1 Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 320 V Qrr Key Performance Parameters at Tj = 25 °C Value Unit 70 mΩ 4.5 n C 35 n C 0 n C Table 2 Ordering Information Type / Ordering Code Package IGT40R070D1 E8220 PG-HSOF-8 Marking 40L070D1 Related links...