IGT60R070D1 - 600V enhancement-mode Power Transistor

Infineon

Key Features

Enhancement mode transistor.
Normally OFF switch.
Ultra fast switching.
No reverse-recovery charge.
Capable of reverse conduction.
Low gate charge, low output charge.
Superior commutation ruggedness.
Qualified for industrial.

IGT60R070D1 600v enhancement-mode power transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	IGT60R070D1
Manufacturer	Infineon
File Size	541.19 KB
Description	600V enhancement-mode Power Transistor
Datasheet	IGT60R070D1 Datasheet

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Full PDF Text Transcription (Reference)

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IGT60R070D1 IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).