* Enhancement mode transistor ‑ Normally OFF switch
* Ultra fast switching
* No reverse‑recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness
* ESD (HBM/CDM) JEDEC standards Benef
IGT65R140D2 Datasheet (1.41 MB)
IGT65R140D2
1.41 MB
Power transistor.
Public IGT65R140D2 Target datasheet CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Infineon’s CoolGaN™ is a highly efficient GaN (gal.
📁 Related Datasheet
IGT65R025D2 Power Transistor (Infineon)
IGT65R035D2 650V Transistor (Infineon)
IGT65R045D2 Power Transistor (Infineon)
IGT65R055D2 Power Transistor (Infineon)
IGT60R042D1 Power Transistor (Infineon)
IGT60R070D1 600V enhancement-mode Power Transistor (Infineon)
IGT60R190D1 Power Transistor (Infineon)
IGT60R190D1S 600V enhancement-mode Power Transistor (Infineon)
IGT6D10 Insulated Gate Bipolar Transistor (GE)
IGT6D11 Insulated Gate Bipolar Transistor (GE)
