* Low VCE(sat) L5 technology offering
* Very low collector-emitter saturation voltage VCEsat
* Best-in-Class tradeoff between conduction and switching losses
* 650V breakdown voltage
* Low gate charge QG
* Maximum junction temperature 175°C
* Qualified
IGW30N65L5 Datasheet (1.58 MB)
IGW30N65L5
1.58 MB
Igbt.
IGBT Low VCE(sat) IGBT in TRENCHSTOPTM 5 technology IGW30N65L5 650V IGBT Low VCE(sat) series fifth generation Data sheet Industrial Power Control IG.
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