Datasheet Summary
Reverse-Conducting IGBT
Reverse-Conducting IGBT with monolithic body diode
Features
- VCE = 1400 V
- IC = 25 A
- Powerful monolithic body diode with low forward voltage designed for soft mutation only
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
- Very low VCEsat
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Qualified according to JESD-022 for target applications
- Pb-free lead plating; RoHS pliant
- Halogen free (according to IEC 61249-2-21)
- plete product spectrum and PSpice Models: http://.infineon./igbt/ Potential applications
- Induction cooker
- Microwave ovens Product...