IHW30N120R2 Datasheet | Infineon

Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features : - Powerful monolithic Body Diode with very low forward voltage - Body diode clamps negative voltages - Trench Stop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI - Qualified according to JEDEC1 for target applications - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ Applications: - Inductive Cooking - Soft Switching Applications Type IHW30N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpuls IFSM Symbol VCE IC Value 1200 60 30 90 90 60 30 90 50 130 120 ±20 ±25 390 -40...+175 -55...+175 260 W °C V Unit V A VCE 1200V IC 30A VCE(sat),Tj=25°C 1.65V Tj,max 175°C Marking H30R1202 Package PG-TO-247-3 PG-TO-247-3 ICpuls IF J-STD-020 and JESD-022 1 Rev. 1.5 Dec. 09 Free Datasheet http://.0PDF. Power Semiconductors Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 °C, unless...