IHW30N120R2
Overview
- Powerful monolithic Body Diode with very low forward voltage
- Body diode clamps negative voltages
- TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
- NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
- Low EMI
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models : Applications:
- Inductive Cooking
- Soft Switching Applications Type IHW30N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpuls IFSM Symbol VCE IC Value 1200 60 30 90 90 60 30 90 50 130 120 ±20 ±25 390 -40...+175 -55...+175 260 W °C V Unit V A VCE 1200V IC 30A VCE(sat),Tj=25°C 1.65V Tj,max 175°C Marking H30R1202 Package PG-TO-247-3 C G E
