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IKA15N65ET6 - IGBT

General Description

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Key Features

  • C.
  • Very low VCE(sat) 1.5V (typ. ).
  • Maximum junction temperature 175°C.
  • Short circuit withstand time 3µs Trench and field-stop technology for 650V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IKA15N65ET6 TRENCHSTOP™IGBT6 IGBTintrenchandfield-stoptechnologywithsoft,fastrecoveryanti-parallel Rapiddiode  FeaturesandBenefits: C •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Shortcircuitwithstandtime3µs Trenchandfield-stoptechnologyfor650Vapplicationsoffers: •verytightparameterdistribution •highruggedness,temperaturestablebehavior •lowVCEsatandpositivetemperaturecoefficient •LowgatechargeQG •Pb-freeleadplating;RoHScompliant •Verysoft,fastrecoveryanti-parallelRapiddiode •CompleteproductspectrumandPSpiceModels: www.infineon.