Datasheet Details
| Part number | IKP30N65H5 |
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| Manufacturer | Infineon |
| File Size | 2.19 MB |
| Description | IGBT |
| Datasheet |
 IKP30N65H5 Datasheet
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General Description
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Key Features
- C High speed H5 technology offering.
- Best-in-Class efficiency in hard switching and resonant topologies.
- Plug and play replacement of previous generation IGBTs.
- 650V breakdown voltage.
- Low gate charge QG.
- IGBT copacked with RAPID 1 fast and soft antiparallel diode.
- Maximum junction temperature 175°C.
- Qualified according to JEDEC for target.