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IKW50N65ES5 - IGBT

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Infineon

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IKW50N65ES5 IGBT by Infineon - Datasheet Preview — Datasheet preview – IKW50N65ES5

Datasheet Details

Part number	IKW50N65ES5
Manufacturer	Infineon
File Size	2.02 MB
Description	IGBT
Datasheet	IKW50N65ES5-Infineon.pdf
Additional preview pages of the IKW50N65ES5 datasheet.

Product details

Description

. . .

Features

C High speed S5 technology offering.
High speed smooth switching device for hard & soft switching.
Very Low VCEsat, 1.35V at nominal current.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with full rated RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

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Published: Jan 28, 2016 |