IKY75N120CH3 - IGBT

Infineon

Datasheet Details

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High speed H3 technology offers:.
Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High speed H3 technology.
High efficiency in hard switching and resonant topologies.
10µsec short circuit withstand time at Tvj=175°C.
Easy paralleling capability due to positive temperature coefficient in VCE(sat).
Low EMI.
Low Gate Charge QG.
Very soft, fast recovery full current anti-parallel diode.

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