• Part: IMBG120R012M2H
  • Description: 1200V SiC MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.27 MB
IMBG120R012M2H Datasheet (PDF) Download
Infineon
IMBG120R012M2H

Description

Pin definition: • Pin 1 - Gate • Pin 2 - Kelvin sense contact • Pin 3…7 - Source • Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R012M2H Package PG-TO263-7-U01 Marking 12M2H012 Datasheet .infineon.

Key Features

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 102 A at TC = 100°C
  • RDS(on) = 12.2 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard mutation
  • XT interconnection technology for best-in-class thermal performance