IMBG65R163M1H
Features
- Optimizedswitchingbehaviorathighercurrents
- mutationrobustfastbodydiodewithlow Qf
- Superiorgateoxidereliability
- Tj,max=175°Candexcellentthermalbehavior
- Lower RDS(on)andpulsecurrentdependencyontemperature
- Increasedavalanchecapability
- patiblewithstandarddrivers(remendeddrivingvoltage:0V-18V)
- Kelvinsourceprovidesupto4timeslowerswitchinglosses
Benefits
- Uniquebinationofhighperformance,highreliabilityandeaseofuse
- Easeofuseandintegration
- Suitablefortopologieswithcontinuoushardmutation
- Higherrobustnessandsystemreliability
- Efficiencyimprovement
- Reducedsystemsizeleadingtohigherpowerdensity
Potentialapplications
- Teleand Server SMPS
- UPS(uninterruptablepowersupplies)
- Solar PVinverters
- EVcharginginfrastructure
- Energystorageandbatteryformation
- Class Damplifiers
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:Thesourceand...
