Datasheet Details
| Part number | IMBG65R163M1H |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.50 MB |
| Description | MOSFET |
| Datasheet |
 IMBG65R163M1H Datasheet
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General Description
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Key Features
- Optimized switching behavior at higher currents.
- Commutation robust fast body diode with low Qf.
- Superior gate oxide reliability.
- Tj,max=175°C and excellent thermal behavior.
- Lower RDS(on) and pulse current dependency on temperature.
- Increased avalanche capability.
- Compatible with standard drivers (recommended driving voltage: 0V-18V).
- Kelvin source provides up to 4 times lower switching losses Benefits.
- Unique com.