IMLT65R060M2H - 650V SiC MOSFET

Infineon

Datasheet Details

Part number	IMLT65R060M2H
Manufacturer	Infineon
File Size	1.16 MB
Description	650V SiC MOSFET
Datasheet	IMLT65R060M2H Datasheet

General Description

1 Maximum ratings 3 T

Overview

Public IMLT65R060M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use.

It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

Key Features

Ultra‑low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Robust against parasitic turn‑on even with 0 V turn‑off gate voltage.
Flexible driving voltage and compatible with bipolar driving scheme.
Robust body diode operation under hard commutation events.
. XT interconnection technology for best‑in‑class thermal performance Benefits.
Enables high efficiency and high power density designs.
Facilitates gre.

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