IMLT65R060M2H
IMLT65R060M2H is 650V SiC MOSFET manufactured by Infineon.
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IMLT65R060M2H Final datasheet
Si C MOSFET
Cool Si C™ MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V Cool Si C™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Features
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
- Flexible driving voltage and patible with bipolar driving scheme
- Robust body diode operation under hard mutation events
- .XT interconnection technology for best‑in‑class thermal performance
Benefits
- Enables high efficiency and high power density designs
- Facilitates great ease of use and integration
- Provides the best price performance ratio pared to Industry’s most ambitious roadmaps
- Reduces the size, weight and bill of materials of the systems
- Enhances system robustness and reliability
Potential applications
- SMPS
- Solar PV inverters
- Energy storage and battery formation
- UPS
- EV charging infrastructure
- Motor drives
Product validation
Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are not exchangeable. Their exchange might lead to malfunction.
Table 1 Key performance parameters
Parameter
Value...
