IMT40R045M2H
Description
1 Datasheet https://.infineon. 2 Revision 2.0 2024‑04‑26 Public 400V CoolSiC™ G2 MOSFET IMT40R045M2H 1 at TA=25 °C, unless otherwise specified Table 2 Parameter Symbol Continuous drain current 1) ID Pulsed drain current 3) Avalanche energy, single pulse 4) Avalanche energy, repetitive Gate source voltage (static) Gate source voltage (transient) Power dissipation Storage temperature Operating junction temperature ID,pulse EAS EAR VGS,DC VGS,AC Ptot Tstg Tj Values Unit Note/ Test Condition Min.
Key Features
- Ideal for high frequency switching and synchronous rectification
- mutation robust fast body diode with low Qfr
- Low RDS(on) dependency on temperature
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Remended gate driving voltage 0 V to 18 V
- XT interconnection technology for best‑in‑class thermal performance
- 100% avalanche tested Potential applications
- Solar PV inverters
- Energy storage, UPS and battery formation
- Class‑D audio
