IMZ120R060M1H - 1200V SiC Trench MOSFET

Features

Very low switching losses.
Threshold-free on state characteristic.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses.
Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
Efficiency improvement.
Enabling higher frequency.

IMZ120R060M1H 1200v sic trench mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IMZ120R060M1H
Manufacturer	Infineon
File Size	1.24 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMZ120R060M1H Datasheet

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Full PDF Text Transcription

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IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.

Published: Dec 30, 2019 |