* Ultra-low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn-on even with 0 V turn-off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMZA65R015M2H Datasheet (1.48 MB)
IMZA65R015M2H
1.48 MB
Mosfet.
IMZA65R015M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .
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