IPA030N10NF2S
Description
Sheet 2 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min. 83 - 59 - 332 - 598 - 20 - 41 - 175 Unit Note/TestCondition A VGS=10V,TC=25°C VGS=10V,TC=100°C A TA=25°C mJ ID=72A,RGS=25Ω V- W TC=25°C °C - 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case RthJC Min.
Key Features
- Optimizedforawiderangeofapplications
- N-Channel,normallevel
- 100%avalanchetested
- Pb-freeleadplating;RoHScompliant
