Datasheet Summary
Type
OptiMOSTM3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Type
IPA032N06N3 G
IPA032N06N3 G
Product Summary VDS RDS(on),max ID
60 V 3.2 mW 84 A
Package Marking
PG-TO220-3-31 032N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain...
