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IPA037N08N3 - Power-Transistor

Download the IPA037N08N3 datasheet PDF. This datasheet also covers the IPA037N08N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPA037N08N3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IPA037N08N3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPA037N08N3. For precise diagrams, and layout, please refer to the original PDF.

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) ...

View more extracted text
ed technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPA037N08N3 G Product Summary VDS RDS(on),max ID IPA037N08N3 G 80 V 3.