IPA60R520CP - Power Transistor

Features

Lowest figure-of-merit RON x Qg.
Ultra low gate charge.
Extreme dv/dt rated.
High peak current capability.
Qualified according to JEDEC1) for target.

Infineon

Datasheet Details

Part number	IPA60R520CP
Manufacturer	Infineon
File Size	404.04 KB
Description	Power Transistor
Datasheet	IPA60R520CP Datasheet
Additional preview pages of the IPA60R520CP datasheet.

📁 Similar Datasheet

IPA60R520CP - N-Channel MOSFET (INCHANGE)
IPA60R520C6 - MOSFET (Infineon Technologies)
IPA60R520C6 - N-Channel MOSFET (INCHANGE)
IPA60R520E6 - Power Transistor (Infineon Technologies)
IPA60R520E6 - N-Channel MOSFET (INCHANGE)
IPA60R060P7 - N-Channel MOSFET Transistor (Inchange Semiconductor)
IPA60R099C6 - MOSFET (Infineon Technologies)
IPA60R099C6 - N-Channel MOSFET (INCHANGE)
IPA60R099P6 - MOSFET (Infineon Technologies)
IPA60R099P6 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPA60R060C7 - MOSFET
IPA60R060P7 - Power-Transistor
IPA60R080P7 - MOSFET
IPA60R099C7 - MOSFET
IPA60R099P7 - 600V MOSFET
IPA60R120C7 - MOSFET
IPA60R120P7 - MOSFET
IPA60R125P6 - MOSFET

Full PDF Text Transcription

Click to expand full text

CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant IPA60R520CP Product Summary V DS @ Tj,max R DS(on),max @ Tj = 25°C Q g,typ 650 V 0.

Published: Sep 3, 2020 |