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Infineon Technologies Electronic Components Datasheet

IPA60R520CP Datasheet

Power Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
IPA60R520CP
Product Summary
V DS @ Tj,max
R DS(on),max @ Tj = 25°C
Q g,typ
650 V
0.520
24 nC
PG-TO220 FP
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
IPA60R520CP
Package
PG-TO220 FP
Marking
6R520P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
ID
T C=25 °C
Pulsed drain current3)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=2.5 A, V DD=50 V
I D=2.5 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS
static
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Rev. 2.1
page 1
Value
6.8
4.3
17
166
0.25
2.5
50
±20
±30
30
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2012-01-09


Infineon Technologies Electronic Components Datasheet

IPA60R520CP Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse current3)
Reverse diode dv /dt 5)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPA60R520CP
Value
3.8
17
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
4.2 K/W
-
-
62
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.25 mA 2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
V DS=600 V, V GS=0 V,
T j=150 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=3.8 A,
T j=25 °C
-
Gate resistance
V GS=10 V, I D=3.8 A,
T j=150 °C
-
RG
f =1 MHz, open drain
-
-
1 µA
10
-
-
100 nA
0.47 0.52
1.3
-
1.3
-
Rev. 2.1
page 2
2012-01-09



Part Number IPA60R520CP
Description Power Transistor
Maker Infineon
Total Page 3 Pages
PDF Download

IPA60R520CP Datasheet PDF





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