IPA65R045C7 - MOSFET

Description

Features

Increased MOSFET dv/dt ruggedness.
Better efficiency due to best in class FOM RDS(on).
Eoss and RDS(on).
Qg.
Best in class RDS(on) /package.
Easy to use/drive.
Pb-free plating, halogen free mold compound Benefits.
Enabling higher system efficiency.
Enabling higher frequency / increased power density solutions.
System cost / size savings due to reduced cooling requirements.
Higher system reliability due to low.

Infineon

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Datasheet Details

Part number	IPA65R045C7
Manufacturer	Infineon
File Size	1.13 MB
Description	MOSFET
Datasheet	IPA65R045C7 Datasheet
Additional preview pages of the IPA65R045C7 datasheet.

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Full PDF Text Transcription

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IPA65R045C7 MOSFET 650VCoolMOSªC7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.

Published: Dec 12, 2016 |