IPB020N10N5 - MOSFET

Description

Features

N-channel, normal level.
Optimized for FOMOSS.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB020N10N5
Manufacturer	Infineon
File Size	0.97 MB
Description	MOSFET
Datasheet	IPB020N10N5 Datasheet

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IPB020N10N5 MOSFET OptiMOSª5Power-Transistor,100V Features •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.0 mΩ ID 176 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB020N10N5 Package PG-TO 263-3 Marking 020N10N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2017-07-11 OptiMOSª5Power-Transistor,100V IPB020N10N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Published: Feb 13, 2016 |