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Infineon Technologies Electronic Components Datasheet

IPB055N03L Datasheet

MOSFET

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Type
OptiMOS3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP055N03L G
IPB055N03L G
Product Summary
V DS
R DS(on),max
ID
IPP055N03L G
IPB055N03L G
30 V
5.5 mΩ
50 A
Package
PG-TO220-3-1
PG-TO263-3
Marking
055N03L
055N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.04
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 Ω
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
50
50
50
50
350
50
60
6
±20
Unit
A
mJ
kV/µs
V
2010-01-18


Infineon Technologies Electronic Components Datasheet

IPB055N03L Datasheet

MOSFET

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP055N03L G
IPB055N03L G
Value
Unit
68
W
-55 ... 175
°C
55/175/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm² cooling area4)
-
-
2.2 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100 nA
Drain-source on-state resistance5) R DS(on) V GS=4.5 V, I D=30 A
-
6.2
7.8 mΩ
V GS=10 V, I D=30 A
-
4.6
5.5
Gate resistance
RG
-
1.5
-Ω
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
38
75
-S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 1.04
page 2
2010-01-18


Part Number IPB055N03L
Description MOSFET
Maker Infineon
PDF Download

IPB055N03L Datasheet PDF






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