* N-channel, normal level
* Fast Diode (FD) with reduced Qrr
* Optimized for hard commutation ruggedness
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC 1) f
IPB117N20NFD Datasheet (0.96 MB)
IPB117N20NFD
0.96 MB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTMFD Power-Transistor, 200 V IPB117N20NFD Data Sheet Rev. 2.0 Final Power Ma.
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