IPB123N10N3 Datasheet Power-Transistor

Manufacturer: Infineon

Download the IPB123N10N3 datasheet PDF. This datasheet also includes the IPB123N10N3G variant, as both parts are published together in a single manufacturer document.

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IPB123N10N3 power-transistor by Infineon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IPB123N10N3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IPB123N10N3
Manufacturer	Infineon
File Size	342.25 KB
Description	Power-Transistor
Datasheet	IPB123N10N3 Datasheet

Overview

IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor.

Key Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IPB123N10N3G	Power-Transistor	Infineon Technologies
	IPB123N10N3G	N-Channel MOSFET	INCHANGE

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