100% Avalanche tested
Product Summary VDS RDS(on) ID
40 V 1.0 mΩ 180 A
PG-TO263-7-3
Type IPB180N04S4L-H0
Package PG-TO263-7-3
Marking 4N04LH0
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=10.
Full PDF Text Transcription for IPB180N04S4L-H0 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IPB180N04S4L-H0. For precise diagrams, and layout, please refer to the original PDF.
Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operat...
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ent mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.
IPB180N04S4L-H0 Datasheet
