IPB200N25N3, IPB200N25N3G Datasheet - Infineon

IPB200N25N3 Power-Transistor

IPB200N25N3 Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 20 mW 64 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified accor

Datasheet Details

IPB200N25N3, IPB200N25N3G

697.76 KB

Power-transistor.

This datasheet PDF includes multiple part numbers: IPB200N25N3, IPB200N25N3G.
Please refer to the document for exact specifications by model.

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IPB200N25N3 IPB200N25N3G Power-Transistor Infineon

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