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Infineon Technologies Electronic Components Datasheet

IPB60R600P6 Datasheet

MOSFET

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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPx60R600P6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket


Infineon Technologies Electronic Components Datasheet

IPB60R600P6 Datasheet

MOSFET

No Preview Available !

600VCoolMOS™P6PowerTransistor
IPB60R600P6,IPP60R600P6,IPA60R600P6,
IPD60R600P6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
D²PAK
tab
2
1
3
DPAK
tab
2
1
3
TO-220
tab
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
650
600
V
m
Qg.typ
12
nC
ID,pulse
18
A
Eoss@400V
1.8
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
IPB60R600P6
IPP60R600P6
IPA60R600P6
IPD60R600P6
Package
PG-TO 263
PG-TO 220
PG-TO 220 FullPAK
PG-TO 252
Marking
6R600P6
RelatedLinks
see Appendix A
Final Data Sheet
2 Rev.2.2,2015-07-10


Part Number IPB60R600P6
Description MOSFET
Maker Infineon
Total Page 19 Pages
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