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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC302NE7N3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC302NE7N3
1Description
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP023NE7N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) •Package:sawnonfoil
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS RDS(on) Die size
75 2.31) 6.7 x 4.