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Infineon Technologies Electronic Components Datasheet

IPC302NE7N3 Datasheet

MOSFET

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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip
IPC302NE7N3
DataSheet
Rev.2.5
Final
Industrial&Multimarket


Infineon Technologies Electronic Components Datasheet

IPC302NE7N3 Datasheet

MOSFET

No Preview Available !

OptiMOS™3PowerMOSTransistorChip
IPC302NE7N3
1Description
•N-channelenhancementmode
•FordynamiccharacterizationrefertothedatasheetofIPP023NE7N3G
•AQL0.65forvisualinspectionaccordingtofailurecatalogue
•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
•Diebond:solderedorglued
•Backsidemetallization:NiVsystem
•Frontsidemetallization:AlCusystem
•Passivation:nitride(onlyonedgestructure)
•Package:sawnonfoil
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS
RDS(on)
Die size
75
2.31)
6.7 x 4.5
V
m
mm2
Thickness
175
µm
Drain
Gate
Source
Type/OrderingCode
IPC302NE7N3
Package
Chip
Marking
not defined
RelatedLinks
-
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
Avalanche energy, single pulse
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
VSD
EAS
Min.
75
2.3
-
-
-
-
-
Values
Typ. Max.
--
3.1 3.8
0.1 1
1 100
1.22) 1003)
0.9 1.2
404) -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=270µA
µA VGS=0V,VDS=75V
nA VGS=20V,VDS=0V
mVGS=10V,ID=2.0A
V VGS=0V,IF=1A
mJ ID =30 A, RGS =25
1) packaged in a P-TO220-3 (see ref. product)
2)typicalbaredieRDS(on);VGS=10V
3) limited by wafer test-equipment
4) Wafer tested. For general avalanche capability refer to the datasheet of IPP023NE7N3 G
Final Data Sheet
2
Rev.2.5,2014-07-23


Part Number IPC302NE7N3
Description MOSFET
Maker Infineon
Total Page 4 Pages
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