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IPC302NE7N3 - MOSFET

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N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP023NE7N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glu

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Part number IPC302NE7N3
Manufacturer Infineon
File Size 534.69 KB
Description MOSFET
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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC302NE7N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC302NE7N3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP023NE7N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) •Package:sawnonfoil PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 75 2.31) 6.7 x 4.
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