• Part: IPD5N25S3-430
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 179.57 KB
Download IPD5N25S3-430 Datasheet PDF
Infineon
IPD5N25S3-430
IPD5N25S3-430 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 250 V 430 m W 5A PG-TO252-3-313 Type IPD5N25S3-430 Package PG-TO252-3- Marking 3N25430 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation I D,pulse E AS I AS dv /dt V GS P tot T C=25°C, V GS=10V T C=100°C, V GS=10V1) T C=25°C I D=1.3A - T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 5 4 20 13 1.3 6 ±20 41 -55 ... +175 55/175/56 Unit A m J A k V/µs V W °C Rev. 1.0 page 1 2012-10-18 Parameter Symbol Conditions Thermal...