IPD5N25S3-430 Datasheet | Infineon

OptiMOS™-T Power-Transistor Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 250 V 430 mW 5A PG-TO252-3-313 Type IPD5N25S3-430 Package PG-TO252-3- Marking 3N25430 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation ID I D,pulse E AS I AS dv /dt V GS P tot T C=25°C, V GS=10V T C=100°C, V GS=10V1) T C=25°C I D=1.3A - T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value...