IPD5N25S3-430
IPD5N25S3-430 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
Product Summary V DS R DS(on),max ID
250 V 430 m W
5A
PG-TO252-3-313
Type IPD5N25S3-430
Package PG-TO252-3-
Marking 3N25430
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation
I D,pulse E AS I AS dv /dt V GS P tot
T C=25°C, V GS=10V T C=100°C, V GS=10V1) T C=25°C I D=1.3A
- T C=25°C
Operating and storage temperature T j, T stg
- IEC climatic category; DIN IEC 68-1
- -
Value
5 4 20 13 1.3 6 ±20 41 -55 ... +175 55/175/56
Unit A m J A k V/µs V W °C
Rev. 1.0 page 1
2012-10-18
Parameter
Symbol
Conditions
Thermal...