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Infineon Technologies Electronic Components Datasheet

IPD5N25S3-430 Datasheet

Power-Transistor

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OptiMOS-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD5N25S3-430
Product Summary
V DS
R DS(on),max
ID
250 V
430 mW
5A
PG-TO252-3-313
Type
IPD5N25S3-430
Package
PG-TO252-3-
Marking
3N25430
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse1)
Avalanche current, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
ID
I D,pulse
E AS
I AS
dv /dt
V GS
P tot
T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
T C=25°C
I D=1.3A
-
-
T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
5
4
20
13
1.3
6
±20
41
-55 ... +175
55/175/56
Unit
A
mJ
A
kV/µs
V
W
°C
Rev. 1.0
page 1
2012-10-18


Infineon Technologies Electronic Components Datasheet

IPD5N25S3-430 Datasheet

Power-Transistor

No Preview Available !

IPD5N25S3-430
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 3.7 K/W
- - 40
- - 62
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=13µA
250 -
2.0 3.0
-V
4.0
Zero gate voltage drain current
I DSS
V DS=250V, V GS=0V,
T j=25°C
-
0.1
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=250V, V GS=0V,
T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=5A
-
-
-
10 100
1 100 nA
370 430 mW
Rev. 1.0
page 2
2012-10-18


Part Number IPD5N25S3-430
Description Power-Transistor
Maker Infineon
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IPD5N25S3-430 Datasheet PDF






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