IPD60R600CM8 Datasheet | Infineon

Features - Suitableforhardandsoftswitchingtopologiesthankstoan  outstandingmutationruggedness - Significantreductionofswitchingandconductionlosses - Bestinclass RDS(on)perpackageproductsenabledbyultralow RDS(on)- A Benefits - Easeofuseandfastdesign-inthroughlowringingtendencyandusage  across PFCand PWMstages - Simplifiedthermalmanagementthankstoouradvanceddieattach  technique - Increasedpowerdensitysolutionsenabledbyusingproductswith  smallerfootprintandhighermanufacturingqualityduestateoftheart  ESDprotection - Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications - Powersuppliesandconverters - PFCstages&LLCresonantconverters - Highefficiencyswitchingapplications - e.g.Server,Tele,EVCharging,UPS Productvalidation Fullyqualifiedaccordingto JEDECfor Industrial Applications Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. DPAK tab 2 1 Drain Pin 2, Tab Gate Pin 1 - 1 - 2 - 1: Internal body diode - 2: Integrated ESD diode Source Pin 3 Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max 600 mΩ Qg,typ 6 n C ID,pulse Eoss @...