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Infineon Technologies Electronic Components Datasheet

IPD65R190C7 Datasheet

MOSFET

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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
650VCoolMOS™C7PowerTransistor
IPD65R190C7
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket


Infineon Technologies Electronic Components Datasheet

IPD65R190C7 Datasheet

MOSFET

No Preview Available !

650VCoolMOS™C7PowerTransistor
IPD65R190C7
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
Gate
Pin 1
Drain
Pin 2, tab
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg.typ
ID,pulse
700
190
23
49
V
m
nC
A
Eoss@400V
2.7
µJ
Body diode di/dt
55
A/µs
Type/OrderingCode
IPD65R190C7
Package
PG-TO 252
Marking
65C7190
RelatedLinks
see Appendix A
Final Data Sheet
2 Rev.2.1,2013-10-17


Part Number IPD65R190C7
Description MOSFET
Maker Infineon
PDF Download

IPD65R190C7 Datasheet PDF






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