IPD65R250E6 MOSFET

Infineon

IPD65R250E6 Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 650V 650V CoolMOS™ E6 Power Transistor IPD65R250E6 Data Sheet Rev.2.2 Final Indu.
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineo.

IPD65R250E6 Features

* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound

📥 Download Datasheet

IPD65R250E6 Datasheet Preview — Preview of IPD65R250E6 PDF

Datasheet Details

Part number: IPD65R250E6
Manufacturer: Infineon ↗
File Size: 1.46 MB
Datasheet: IPD65R250E6-Infineon.pdf
Description: MOSFET

📁 Related Datasheet

IPD65R1K5CE - N-Channel MOSFET (INCHANGE)
IPD65R380C6 - Power Transistor (Infineon Technologies)
IPD65R380E6 - Power Transistor (Infineon Technologies)
IPD65R400CE - N-Channel MOSFET (INCHANGE)
IPD65R420CFD - Power Transistor (Infineon Technologies)
IPD65R420CFDA - MOSFET (Infineon Technologies)
IPD65R600C6 - Power Transistor (Infineon Technologies)
IPD65R600E6 - MOSFET (Infineon Technologies)

📌 All Tags

MOSFET Infineon

Infineon IPD65R250E6-like datasheet

IPD65R250C6 - MOSFET
IPD65R225C7 - MOSFET
IPD65R190C7 - MOSFET
IPD65R1K0CE - MOSFET
IPD65R1K4C6 - MOSFET
IPD65R1K4CFD - MOSFET