IPG20N04S4-12A - Power-Transistor

Features

Dual N-channel Normal Level - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested.
Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 40 V 12.2 mΩ 20 A PG-TDSON-8-10 1 Type IPG20N04S4-12A Package PG-TDSON-8-10 Marking 4N0412 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter.

Infineon

Datasheet Details

Part number	IPG20N04S4-12A
Manufacturer	Infineon
File Size	191.03 KB
Description	Power-Transistor
Datasheet	IPG20N04S4-12A Datasheet
Additional preview pages of the IPG20N04S4-12A datasheet.

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Full PDF Text Transcription

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IPG20N04S4-12A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 40 V 12.

Published: Nov 24, 2016 |