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IPG20N06S2L-65 - Power Transistor

Key Features

  • Dual N-channel Logic Level - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPG20N06S2L-65 Product Summary VDS RDS(on),max3) ID 55 V 65 mW 20 A PG-TDSON-8 Type IPG20N06S2L-65 Package PG-TDSON-8 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one chan.

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Full PDF Text Transcription (Reference)

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® OptiMOS Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N06S2L-65 Product Summary VDS RDS(on),max3) ID 55 V 65 mW 20 A PG-TDSON-8 Type IPG20N06S2L-65 Package PG-TDSON-8 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active1) ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage I D,pulse - E AS I AS V GS I D=10A - Power dissipation one channel active P tot T C=25 °C Operating and stor