IPG20N06S3L-35 Description
IPG20N06S3L-35 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 35 20 V mΩ.
IPG20N06S3L-35 Key Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested PG-TDSON-8-4
- 1 1 53 30
- 1330 170 160 3 5 8 9
- 7 3 18 5.1