IPG20N10S4L-35
IPG20N10S4L-35 is Power-Transistor manufactured by Infineon.
Opti MOS™-T2 Power-Transistor
Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
Product Summary
V DS
4) DS(on),max
100 V 35 m W 20 A
PG-TDSON-8-4
Type IPG20N10S4L-35
Package
Marking
PG-TDSON-8-4 4N10L35
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4)
Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V2)
I...
