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IPI26CN10NG - Power-Transistor

Download the IPI26CN10NG datasheet PDF. This datasheet also covers the IPI26CN10N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI26CN10N-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Infineon

Part Number Description
IPI26CN10N Power-Transistor
IPI200N15N3 Power-Transistor
IPI200N25N3 Power-Transistor
IPI023NE7N3G Power-Transistor
IPI024N06N3 Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 Marking 26CN10N 25CN10N 26CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) I D,