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Infineon Technologies Electronic Components Datasheet

IPI50R380CE Datasheet

Power Transistor

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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS CE
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Data Sheet
Rev. 2.0, 2010-08-27
Final
Industrial & Multimarket


Infineon Technologies Electronic Components Datasheet

IPI50R380CE Datasheet

Power Transistor

No Preview Available !

500V CoolMOS™ CE Power Transistor
IPP50R380CE, IPA50R380CE
IPI50R380CE
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ CE series combines
the experience of the leading SJ MOSFET supplier with high class
innovation. The resulting devices provide all benefits of a fast switching
SJ MOSFET while not sacrificing ease of use. Extremely low switching
and conduction losses make switching applications even more efficient,
more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
drain
pin 2
gate
pin 1
source
pin 3
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
550
0.38
32
30
2.8
500
V
nC
A
µJ
A/µs
Type / Ordering Code
IPP50R380CE
IPA50R380CE
IPI50R380CE
Package
PG-TO220
PG-TO220 FullPAK
PG-TO262
Marking
5R380CE
Related Links
IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2010-08-27


Part Number IPI50R380CE
Description Power Transistor
Maker Infineon
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