IPL65R070C7
Key Features
- IncreasedMOSFETdv/dtruggedness
- BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density
- Easytouse/driveduetodriversourcepinforbettercontrolofthegate.
- Pb-freeplating,halogenfreemoldcompound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
- Enablinghighersystemefficiencybylowerswitchinglosses
- Enablinghigherfrequency/increasedpowerdensitysolutions
- Systemcost/sizesavingsduetoreducedcoolingrequirements
- Highersystemreliabilityduetoloweroperatingtemperatures Potentialapplications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 70 mΩ Qg,typ 64 nC ID,pulse 145 A Eoss @ 400V 8 µJ Body diode diF/dt 60 A/µs Type/OrderingCode IPL65R070C7 Package PG-VSON-4 Marking 65C7070 ThinPAK8x8 Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 RelatedLinks see Appendix A Final Data Sheet 1 Rev.2.1,2017-08-29 650VCoolMOSªC7PowerTransistor
