IPL65R099C7
Key Features
- IncreasedMOSFETdv/dtruggedness
- BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density
- Easytouse/driveduetodriversourcepinforbettercontrolofthegate.
- Pb-freeplating,halogenfreemoldcompound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
- Enablinghighersystemefficiencybylowerswitchinglosses
- Enablinghigherfrequency/increasedpowerdensitysolutions
- Systemcost/sizesavingsduetoreducedcoolingrequirements
- Highersystemreliabilityduetoloweroperatingtemperatures Potentialapplications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 99 mΩ Qg,typ 45 nC ID,pulse 100 A Eoss @ 400V
